02.05.15
The new SCT20N120 silicon-carbide power MOSFET from STMicroelectronics brings advanced efficiency and reliability to a broader range of energy-conscious applications such as inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment.
ST is among the few vendors leading the development of the robust and efficient silicon-carbide power semiconductors. Switching performance is also consistent over temperature thanks to highly stable turn-off energy (Eoff) and gate charge (Qg). The resulting low conduction and switching losses, combined with ultra-low leakage current, simplify thermal management and maximize reliability.
ST is among the few vendors leading the development of the robust and efficient silicon-carbide power semiconductors. Switching performance is also consistent over temperature thanks to highly stable turn-off energy (Eoff) and gate charge (Qg). The resulting low conduction and switching losses, combined with ultra-low leakage current, simplify thermal management and maximize reliability.