08.21.15
Nantero announced it has been recognized by the 2015 Global Products & Services Awards as the Best Carbon Nanotube Technology Manufacturer, while its NRAM technology won the innovation award in computing memory.
These awards highlight Nantero’s success in delivering a new generation of super-fast, ultra-high density memory that will enable a variety of exciting new features and products in both consumer and enterprise electronics.
“We are pleased to see Nantero and its NRAM technology recognized for the high level of innovation we are delivering to the industry,” said Greg Schmergel, co-founder, president and CEO of Nantero, Inc. “With NRAM already installed in multiple production fabs and being designed into exciting new products today, we have made significant progress in delivering a new generation of memory that has the potential to support substantial innovations in electronics.”
NRAM is a new generation of memory that is as fast as DRAM, permanently nonvolatile, can deliver terabits of storage capacity, and consumes very little power. Targeting both the embedded and standalone memory markets, Nantero is already licensing its NRAM IP to major chip manufacturers, foundries and electronics companies around the world.
Key advantages of NRAM include:
• CMOS Compatible: Works in standard CMOS fabs with no new equipment needed.
• Limitless Scalability: Designed to scale below 5nm in the future.
• High Endurance: Proven to operate for orders of magnitude more cycles than flash.
• Faster Read and Write: Same as DRAM, 100s of times faster than NAND.
• High Reliability: will retain memory for >1,000 years at 85°C or more than 10 years at 300°C.
• Low Power: Essentially zero in standby mode, 160x lower write energy per bit than NAND.
• Low Cost: Simple structure, can be 3D multi-layer and multi-level cell (MLC).
These awards highlight Nantero’s success in delivering a new generation of super-fast, ultra-high density memory that will enable a variety of exciting new features and products in both consumer and enterprise electronics.
“We are pleased to see Nantero and its NRAM technology recognized for the high level of innovation we are delivering to the industry,” said Greg Schmergel, co-founder, president and CEO of Nantero, Inc. “With NRAM already installed in multiple production fabs and being designed into exciting new products today, we have made significant progress in delivering a new generation of memory that has the potential to support substantial innovations in electronics.”
NRAM is a new generation of memory that is as fast as DRAM, permanently nonvolatile, can deliver terabits of storage capacity, and consumes very little power. Targeting both the embedded and standalone memory markets, Nantero is already licensing its NRAM IP to major chip manufacturers, foundries and electronics companies around the world.
Key advantages of NRAM include:
• CMOS Compatible: Works in standard CMOS fabs with no new equipment needed.
• Limitless Scalability: Designed to scale below 5nm in the future.
• High Endurance: Proven to operate for orders of magnitude more cycles than flash.
• Faster Read and Write: Same as DRAM, 100s of times faster than NAND.
• High Reliability: will retain memory for >1,000 years at 85°C or more than 10 years at 300°C.
• Low Power: Essentially zero in standby mode, 160x lower write energy per bit than NAND.
• Low Cost: Simple structure, can be 3D multi-layer and multi-level cell (MLC).