09.22.17
At the end of 2016, Solliance started a project to develop a stable, reproducible and industrial up-scaleable process to manufacture CuInGa(Se,S)2 devices using electrochemical deposition, with a cell conversion efficiency above 15%. A record cell with an efficiency of 15.6% was produced only six months later, using electrochemical deposition of copper, indium and gallium. But the only way to create cells using this potential less expensive production technology, is with back-end interconnect technology.
With an optimized homogeneity and uniformity of the CIGS absorber layer, Solliance succeeded in manufacturing a fully interconnected mini module using back-end interconnect technology. This technology makes it possible to realize an interconnected CIGS-based device in one final processing step. The mini module (200 x 185 mm) contains 37 cells and has an aperture efficiency of 9.3% (average cell results of reference plates was 11.9%). The P3 scribe was made without shunting.
The back-end interconnect technology opens the way to free form and fully customizable CIGS modules.
With an optimized homogeneity and uniformity of the CIGS absorber layer, Solliance succeeded in manufacturing a fully interconnected mini module using back-end interconnect technology. This technology makes it possible to realize an interconnected CIGS-based device in one final processing step. The mini module (200 x 185 mm) contains 37 cells and has an aperture efficiency of 9.3% (average cell results of reference plates was 11.9%). The P3 scribe was made without shunting.
The back-end interconnect technology opens the way to free form and fully customizable CIGS modules.